RESEARCH PUBLICATIONS

SEMICONDUCTOR DEVICE RELIABILITY (2009 - 2022)

(LOGIC, NVM, PACKAGING AND 2D MATERIAL RELIABILITY STUDIES)

  1. N.L. Prabhu and N. Raghavan, "Learning “On-The-Edge” – Performance Analysis using Low Powered in-memory RRAM Gradient Descent Optimization Circuit", IEEE Access, To Be Submitted, (2022).

  2. A. Ranjan, S.O’Shea, Y.S. Ang, A. Padovani, C. Zhang, L. Cao, M.S. Munde, M. Bosman, N. Raghavan, X.X. Zhang and K.L. Pey, “Reliability of Single Crystalline Hexagonal Boron Nitride Gate Dielectrics”, ACS Applied Electronic Materials, To Be Submitted, (2022).

  3. J.J. Joseph, L. Selvaraj, C. Wang and N. Raghavan, “Successive Multi-Step Compliance Sweep Methodology for Understanding Evolution of Degradation Mechanisms in p-GaN HEMTs”, IEEE Transactions on Electron Devices, To Be Submitted, (2022).

  4. R. Dutta, S.B. Hamid, J.H. Lim, J. Tan, B. Sikder, N. Raghavan, K.L. Pey and M.B. Zunaid, “Experimental and Theoretical Investigation of Intra-Cell Magnetic Coupling Induced Variability of Spin-Transfer Torque Magnetic RAMs”, IEEE Transactions on Electron Devices, To Be Submitted, (2022).

  5. N.L. Prabhu and N. Raghavan, “RRAM-based In-Memory Computing NAND / NOR Circuit Performance Analysis in a CNN Training Framework on the Edge for Low Power IoT Applications”, IEEE Access, Under Revision, (2022).

  6. J. Tan, J.H. Lim, B. Sikder, M.B. Zunaid, J.H. Kwon, K. Yamane, V.B. Naik, N. Raghavan and K.L. Pey, “Impact of Voltage Polarity on Time Dependent Dielectric Breakdown of 1 nm MgO based STT-MRAM with Self-Heating Correction”, IEEE Transactions on Electron Devices, Under Revision, (2022).

  7. A. Deogaonkar, M. Seal, A Senapati, S. Ginnaram, A. Ranjan, S. Maikap and N. Raghavan, “Robust Resistive Switching Characteristics of AlOx CBRAM using Simple and Cost-Effective Thermal Evaporation Process”, Microelectronics Reliability, Accepted, In Press, (2022).

  8. M. Seal, A. Deogaonkar, A Senapati, S. Maikap and N. Raghavan, “Ruthenium based RRAM for Low Variability Switching and Scaling for Contemporary Computing Systems”, Microelectronics Reliability, Accepted, In Press, (2022).

  9. A. Maruvada, K. Shubhakar, N. Raghavan, K.L. Pey, S.J. O’Shea, "Dielectric breakdown of 2D muscovite mica", Scientific Reports, 12(1), pp.1-11, (2022).

  10. A. Ranjan, F.M. Puglisi, J. Molina, P. Pavan, S. O’Shea, N. Raghavan and K.L. Pey, “Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 using Defect Nano-spectroscopy”, ACS Applied Electronic Materials, DOI: 10.1021/acsaelm.2c00559, (2022).

  11. A.R. Junejo, H. Ryu, W. Noh, N. Raghavan, S. Kim and J. Doh, “Multi-Physics Simulation-Based Prognosis of Titanium Dioxide Nanoparticles-Embedded Solar Cell”, 29th International IEEE Symposium Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-4, (2022).

  12. C. Selvanayagam, P.L.T. Duong, B. Wilkerson and N. Raghavan, “Global Optimization of Surface Warpage for Inverse Design of Ultra-Thin Electronic Packages using Tensor Train Decomposition”, IEEE Access, Vol. 10, pp. 48589-48602, (2022).

  13. N.L. Prabhu and N. Raghavan, “Computational Failure Analysis of In-Memory RRAM Architecture for Pattern Classification CNN Circuits”, IEEE Access, Vol. 9, pp.168093-168106, (2021).

  14. C. Selvanayagam, P.L.T. Duong, B. Wilkerson and N. Raghavan, “Inverse Design for Low Warpage Ultra-Thin Packages Using Constrained Particle Swarm Optimization”, IEEE Access, Vol. 9, pp. 64043-64053, (2021).

  15. J. Tan, J.H. Lim, J.H. Kwon, V.B. Naik, N. Raghavan and K.L. Pey, “Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping”, Solid-State Electronics, Vol. 183, p.108032, (2021).

  16. F.L. Aguirre, A. Ranjan, N. Raghavan, A. Padovani, S.M. Pazos, N. Vega, N. Müller, M. Debray, J. Molina-Reyes, K.L. Pey and F. Palumbo, “Decoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects”, Applied Physics Express, Vol. 14(12), p.121001, (2021).

  17. J. Dan., L. Weihua and N. Raghavan, “Semiconductor Manufacturing Final Test Yield Optimization and Wafer Acceptance Test Parameter Inverse Design Using Multi-Objective Optimization Algorithms”, IEEE Access, Vol. 9, pp.137655-137666, (2021).

  18. M. Lanza, R. Waser, D. Ielmini, J.J. Yang, L. Goux, J. Suñe, A.J. Kenyon, A. Mehonic, S. Spiga, …, N. Raghavan and S. Wiefels, “Standards for the characterization of endurance in resistive switching devices”, ACS Nano, Vol. 15(11), pp.17214-17231, (2021).

  19. R. Sahay, A.S. Budiman, C. Harito, F.E. Gunawan, E. Navarro, S. Escoubas, T.W. Cornelius, I. Aziz, P.S. Lee, O. Thomas and N. Raghavan, “Berkovich nanoindentation study of 16 nm Cu/Nb ARB nanolaminate: Effect of anisotropy on the surface pileup”, MRS Advances, Vol. 6(19), pp.495-499, (2021).

  20. C. Selvanayagam, P.L.T. Duong, B. Wilkerson and N. Raghavan, “Comparison of Global Optimization Algorithms for Inverse Design of Substrate Metal Density for Low Warpage Design in Ultra-Thin Packages”, IEEE 71st Electronic Components and Technology Conference (ECTC) (pp. 2320-2327). IEEE, (2021).

  21. A. Ranjan, N. Raghavan, M. Holwill, K. Watanabe, T. Taniguchi, K.S. Novoselov, K.L. Pey and S.J. O’Shea, “Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride”, ACS Applied Electronic Materials, Vol. 3(8), pp.3547-3554, (2021).

  22. J. Dan, L. Weihua and N. Raghavan, “A Gaussian Mixture Model Clustering Ensemble Regressor for Semiconductor Manufacturing Final Test Yield Prediction”, IEEE Access, Vol. 9, 22253-22263, (2021).

  23. A.S. Budiman, R. Sahay, H.P.A. Ali, S.K. Tippabhotla, I. Radchenko and N. Raghavan, “Interface-mediated plasticity and fracture in nanoscale Cu/Nb multilayers as revealed by in situ clamped microbeam bending”, Materials Science and Engineering: A, Vol. 803, p.140705, (2021).

  24. A.S. Budiman, R. Sahay, K. Agarwal, G. Illya, R.G. Widjaja, A. Baji and N. Raghavan, “Impact-Resistant and Tough 3D Helicoidally Architected Polymer Composites Enabling Next-Generation Lightweight Silicon Photovoltaics Module Design and Technology”, Polymers, Vol. 13(19), p.3315, (2021).

  25. B. Sikder, J.H. Lim, M.A. Kumar, A. Padovani, M. Haverty, U. Kamal, N. Raghavan, L. Larcher, K.L. Pey, and M.Z. Baten, “Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs”, IEEE Electron Device Letters, Vol. 42, No. 1 (2020): 34-37.

  26. A. Ranjan, S.J. O’Shea, M. Bosman, N. Raghavan and K.L. Pey, “Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride”, ACS Applied Materials & Interfaces, Vol. 12, No. 49 (2020): 55000-55010.

  27. J. Dan, L. Weihua and N. Raghavan, “A Novel Framework for Semiconductor Manufacturing Final Test Yield Classification using Machine Learning Techniques”, IEEE Access, Vol. 8, 197885-197895, (2020).

  28. X. Zhong, C. Kui, G. Song and N. Raghavan, “Deep Learning Based Detection for Mitigating Sneak Path Interference in Resistive Memory Arrays”, IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), pp. 1-4. IEEE, 2020.

  29. C. Selvanayagam, P.L.T. Duong and N. Raghavan, “Learning Localized Spatial Material Properties of Substrates in Ultra-Thin Packages using Markov Chain Monte Carlo and Finite Element Analysis”, IEEE Access, Vol. 8, 50163-50170, (2020).

  30. C. Selvanayagam, P.L.T. Duong and N. Raghavan, “AI-Assisted Package Design for Improved Warpage Control of Ultra-Thin Packages”, In 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (pp. 1-7), Invited, IEEE.

  31. C. Selvanayagam, P.L.T. Duong and N. Raghavan, “Inverse Design of Substrate from Warpage Surrogate Model using Global Optimization Algorithms in Ultra-Thin Packages”, IEEE 70th Electronic Components and Technology Conference (ECTC), Florida, USA, pp. 2309-2316, (2020).

  32. C. Selvanayagam, P.L.T. Duong and N. Raghavan, “Learning the Stress-Strain Relationships of Ultra-Thin Package Materials using a Bayesian Approach”, IEEE 70th Electronic Components and Technology Conference (ECTC), Florida, USA, pp. 1638-1645, (2020).

  33. N.L. Prabhu, .D.L.J. Jun, P.A. Dananjaya, W.S. Lew, E.H. Toh and N. Raghavan, “Exploring the Impact of Variability in Resistance Distributions of RRAM on the Prediction Accuracy of Deep Learning Neural Networks”, MDPI Electronics, Vol. 9(3), 414, (2020). (Editor’s Highlight Article)

  34. J.H. Lim, N. Raghavan, J.H. Kwon, T.Y. Lee, R. Chao, N.L. Chung, K. Yamane, N. Thiyagarajah, V.B. Naik and K.L. Pey, “Origins and Signatures of Tail Bit Failures in Ultra-Thin MgO-based STT-MRAM”, IEEE International Reliability Physics Symposium (IRPS), Dallas, Texas, USA, pp. 1-5, (2020).

  35. A. Ranjan, S.J. O’Shea, M. Bosman, J. Molina, N. Raghavan and K.L. Pey, “Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films”, IEEE International Reliability Physics Symposium (IRPS), Dallas, Texas, USA, pp. 1-7, (2020).

  36. L. Luo, K. Shubhakar, S. Mei, N. Raghavan, F. Zhang, D. Shum and K.L. Pey, “Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device”, IEEE International Reliability Physics Symposium (IRPS), Dallas, Texas, USA, pp. 1-6, (2020).

  37. N.L. Prabhu and N. Raghavan, “Generalized Convolution Simulation Stack for RRAM Device based Deep Learning Neural Network”, 27th International IEEE Symposium Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-6, (2020).

  38. N.L. Prabhu and N. Raghavan, “Exploring RRAM Variability as Synapses on Inception Simulation Framework to Characterize the Prediction Accuracy and Power Estimation per Bit for Convolution Neural Network”, 27th International IEEE Symposium Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-5, (2020).

  39. P.L.T. Duong, Q. Yang, H. Park and N. Raghavan, “Reliability analysis and design of a single diode solar cell model using polynomial chaos and active subspace”, Microelectronics Reliability, 100, 113477, (2019).

  40. S. Mei, M. Bosman, K. Shubhakar, N. Raghavan, L. Ming, and K. L. Pey. "3D characterization of hard breakdown in RRAM device." Microelectronic Engineering 216 (2019): 111042.

  41. M.H. Zhuge, Z. Yang, J. Zhang, Y. Zheng, Q. Song, C. Pang, X. Liu, N. Raghavan and Q. Yang, "Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling." ACS Nano 13, no. 9 (2019): 9965-9972.

  42. A. Ranjan, N. Raghavan, F.M. Puglisi, S. Mei, A. Padovani, L. Larcher, K. Shubhakar and K.L. Pey, "Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics." IEEE Electron Device Letters 40, no. 8 (2019): 1321-1324.

  43. K.L. Pey, A. Ranjan, N. Raghavan and S.J. O’Shea, “New Physics of Breakdown in 2D Hexagonal Boron Nitride Dielectrics and Its Potential Applications”, 8th IEEE International Symposium on Next Generation Electronics (ISNE) (pp. 1-4), (2019).

  44. N.L. Prabhu, D.L.J. Jun, P.A. Dananjaya, E.H. Toh, W.S. Lew and N. Raghavan, “Exploring the Power–Prediction Accuracy Trade-Off in a Deep Learning Neural Network using Wide Compliance RRAM Device”, 8th International Symposium on Next Generation Electronics (ISNE) (pp. 1-3). IEEE, (2019).

  45. C. Selvanayagam, P.L.T. Duong, R. Mandal and N. Raghavan. "Machine Learning Approach to Improve Accuracy of Warpage Simulations." In 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), pp. 834-841. IEEE, 2019.

  46. C. Selvanayagam, R. Mandal, P.L.T. Duong and N. Raghavan, "Neural Network Assisted Speed Up of High Fidelity Warpage Simulations towards Design for Reliability in Ultra-Thin Packages", IEEE CPMT Symposium Japan (ICSJ), pp. 1-5, (2019).

  47. F.L. Aguirre, A. Padovani, A. Ranjan, N. Raghavan, N. Vega, N. Müller, S.M. Pazos, M. Debray, J. Molina, K.L. Pey and F. Palumbo, “Spatio-temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated versus Uncorrelated Mechanisms”, IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp. 1-8, (2019). (Best Paper Award)

  48. J.H. Lim, N. Raghavan, V.B. Naik, J.H. Kwon , K. Yamane, H. Yang, K.H. Lee and K.L. Pey, "Correct Extrapolation Model for TDDB of MgO Magnetic Tunnel Junctions", IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp. 1-7, (2019).

  49. K.L. Pey, A. Ranjan, N. Raghavan, K. Shubhakar and S.J. O’Shea, “Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride – The Knowns and The Unknowns”, IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp. 1-12, (2019). (Invited)

  50. K.L. Pey, J.H. Lim, N. Raghavan, S. Mei, J.H. Kwon, V.B. Naik and K.H. Lee, "New Insights into Dielectric Breakdown of MgO in STT-MRAM Devices", IEEE Electron Devices and Technology Meeting (EDTM), pp.1-3, (2019). (Invited)

  51. M. Lanza, H.S.P. Wong, E. Pop, D. Ielmini, D. Strukov, B.C. Regan, L. Larcher, M.A. Villena, J. Yang, L. Goux, A. Belmonte, Y. Yang, F.M. Puglisi, J.F. Kang, B.M. Köpe, E. Yalon, A.J. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.H. Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J.B. Roldan, E. Miranda, J. Suñe, K.L. Pey, X. Wu, N. Raghavan, E.Y. Wu, W.D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M.C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, J. Xu, T.T. Han, K. Zhu, S. Chen, F. Hui and Y. Shi, “Recommended Methods to Study Resistive Switching Devices”, Advanced Electronic Materials, 1800143, (2018).

  52. J.H. Lim, N. Raghavan, A. Padovani, J.H. Kwon, K. Yamane, H. Yang, V.B. Naik, L. Larcher, K.H. Lee and K.L. Pey, "Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions", IEEE International Electron Devices Meeting (IEDM), 25.3.1-25.3.4, (2018).

  53. P.L.T. Duong, X. Xu, Q. Yang and N. Raghavan, “Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures”, Microelectronics Reliability, Vol. 88, pp.85-90, (2018).

  54. X. Wu, K. Yu, D. Cha, M. Bosman, N. Raghavan, X. Zhang, K. Li, Q. Liu, L. Sun and K.L. Pey, “Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects”, Advanced Science, p.1800096, (2018).

  55. Y. Zhao, C. Pang, Z. Wen, Y. Liu, X. Qiao, Z. Yang, N. Raghavan, Y. Zhao and Q. Yang, “A microfiber temperature sensor based on fluorescence lifetime”, Optics Communications, Vol. 426, pp.231-236, (2018).

  56. M. Tang, P. Xu, Z. Wen, X. Chen, C. Pang, X. Xu, C. Meng, X. Liu, H. Tian, N. Raghavan and Q. Yang, “Fast response CdS-CdSxTe1−x-CdTe core-shell nano-belt photodetector”, Science Bulletin, Vol. 63(17), pp.1118-1124, (2018).

  57. X. Xu, P.L.T. Duong, N. Raghavan and Q. Yang, “A statistical model for synthesis of bandgap graded nanostructure”, Journal of Physics: Conference Series, Vol. 1077, No. 1, p. 012005, IOP Publishing, (2018).

  58. X. Feng, N. Raghavan, S. Mei, S. Dong, K.L. Pey and H. Wong, “Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress”, Microelectronics Reliability, Vol. 88, pp.164-168, (2018).

  59. C. Selvanayagam, R. Mandal and N. Raghavan, "Comparison of experimental, analytical and simulation methods to estimate substrate material properties for warpage reliability analysis." Microelectronics Reliability, Vol. 89, pp. 817-823, (2018).

  60. A. Ranjan, F.M. Puglisi, N. Raghavan, S.J. O’Shea, K. Shubhakar, P. Pavan, A. Padovani, L. Larcher and K.L. Pey, “Random telegraph noise in 2D hexagonal boron nitride dielectric films”, Applied Physics Letters, Vol. 112, 133505, (2018).

  61. A. Ranjan, N. Raghavan, S.J. O’Shea, S. Mei, M. Bosman, K. Shubhakar and K.L. Pey, “Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films”, Scientific Reports, Vol. 8, Art. 2854, (2018).

  62. A. Ranjan, N. Raghavan, S.J. O’Shea, S. Mei, M. Bosman, K. Shubhakar and K.L. Pey, “Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics”, IEEE International Reliability Physics Symposium (IRPS), Burlingame, California, 4A.1.1 - 4A.1.6, (2018).

  63. J.H. Lim, N. Raghavan, S. Mei, V. Naik, J.H. Kwon, K.H. Lee and K.L. Pey, “Area and pulse width dependence of bipolar TDDB in MgO STTRAM”, IEEE International Reliability Physics Symposium (IRPS), Burlingame, California, 6D.6.1 – 6D.6.6, (2018).

  64. N. Raghavan, “Evolution of the Physics and Stochastics of Failure in Ultra-Thin Dielectrics – From SiO2 to Advanced High-κ Gate Stacks”, IEEE International Nanoelectronics Conference (INEC), Invited, pp.1-2, Kuala Lumpur, Malaysia, (2018).

  65. S. Mei, N. Raghavan, M. Bosman and K.L. Pey, “Stochastic modeling of FinFET degradation based on a resistor network embedded Metropolis Monte Carlo method” IEEE Transactions on Electron Devices, Vol. 65, No. 2, pp. 440-447, (2018).

  66. L. Laiqiang, K. Shubhakar, S. Mei, N. Raghavan, B. Liu, J.Y. Huang, Y. Liu, H. Zheng, F. Zhang, D. Shum and K.L. Pey, “Impact of carbon doping on polysilicon grain size distribution and yield enhancement for 40 nm embedded non-volatile memory technology”, IEEE Transactions on Device and Materials Reliability, Vol. 18, No. 1, pp. 64-69, (2018).

  67. Y. Shi, C. Pan, V. Chen, N. Raghavan, K.L. Pey, F.M. Puglisi, E. Pop, H.S.P. Wong and M. Lanza, “Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses”, IEEE International Electron Device Meeting (IEDM), San Francisco, USA, pp. 5.4.1-5.4.4, (2017).

  68. C.I. Ossai and N. Raghavan, “Nanostructure and nanomaterial characterization, growth mechanisms and applications”, Nanotechnology Reviews, 20170156, doi:10.1515/ntrev-2017-0156, (2017).

  69. R. Thamankar, F.M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S.J. O’Shea and K.L. Pey, “Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations”, Journal of Applied Physics, 122(2), 024301, (2017).

  70. N. Raghavan, “Failure of Weibull distribution to represent switching statistics in OxRAM”, Microelectronic Engineering, Vol. 178, pp. 230-234, (2017).

  71. J.H. Lim, N. Raghavan, S. Mei, K.H. Lee, S.M. Noh, J.H. Kwon, E. Quek and K.L. Pey, “Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions”, Microelectronic Engineering, Vol. 178, pp. 308-312, (2017).

  72. X. Feng, N. Raghavan, S. Mei, L. Du, K.L. Pey and H. Wong, “Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks”, Microelectronic Engineering, Vol. 178, pp. 293-297, (2017).

  73. P. Xu, S. Liu, M. Tang, X. Xu, X. Lin, Z. Wu, M. ZhuGe, Z. Ren, Z. Wang, X. Liu, Z. Yang, N. Raghavan and Q. Yang, “Highly polarized single mode nanobelt laser”, Applied Physics Letters, Vol. 110, Issue 20, 201112, (2017).

  74. N. Raghavan, “Statistics of disturb events in OxRAM devices – A phenomenological model”, IEEE International Reliability Physics Symposium (IRPS), PM.3.1 – PM.3.7, Monterey, California, (2017).

  75. S. Mei, N. Raghavan, M. Bosman and K.L. Pey, “Statistical basis and physical evidence for clustering model in FinFET degradation”, IEEE International Reliability Physics Symposium (IRPS), 3C.1.1 – 3C.1.6, Monterey, California, (2017).

  76. A. Ranjan, N. Raghavan, B. Liu, S.J. O’Shea, K. Shubhakar, C.S. Lai and K.L. Pey, “Nanoscale investigations of soft breakdown events in few layered fluorinated graphene”, IEEE International Reliability Physics Symposium (IRPS), 3C.5.1 – 3C.5.6, Monterey, California, (2017).

  77. N. Raghavan and K.L. Pey, “Percolation framework and Monte Carlo techniques for improved probabilistic design for variability in products and systems”, 6th International Conference on Research into Design (ICoRD), Guwahati, India, pp.1-13, (2017).

  78. K.L. Pey, A. Ranjan, S. Mei, N. Raghavan, K. Shubhakar, M. Bosman and S.J. O’Shea, “Recent key developments in nanoscale reliability and failure analysis techniques for advanced nanoelectronic devices”, ULSIC vs. TFT : 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Invited, pp.1, Vienna, Austria, (2017).

  79. C.I. Ossai and N. Raghavan, “Uncertainty quantification in nanowire growth modeling - A precursor to quality semiconductor nanomanufacturing”, Microelectronics Reliability, Vol. 76, pp. 106-111, (2017).

  80. S. Mei, N. Raghavan, M. Bosman, D. Linten, G. Groeseneken, N. Horiguchi and K.L. Pey, “New Understanding of Dielectric Breakdown in Advanced FinFET Devices – Physical, Electrical, Statistical and Multiphysics Study”, IEEE International Electron Device Meeting (IEDM), San Francisco, USA, pp. 1-4, (2016).

  81. N. Raghavan, “Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices”, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 64, pp. 54-58, (2016).

  82. A. Ranjan, N. Raghavan, J. Molina, S.J. O’Shea, K. Shubhakar and K.L. Pey, “Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM”, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 64, pp. 172-178, (2016).

  83. K. Shubhakar, S. Mei, M. Bosman, N. Raghavan, A. Ranjan, S.J. O’Shea and K.L. Pey, “Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks – Computational and physical insight”, 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 64, pp.204-209, (2016).

  84. K.L. Pey, A. Ranjan, R. Thamankar, K. Shubhakar, N. Raghavan and S.J. O’Shea, “Observation of resistive switching by physical analysis techniques”, 5th International Symposium on Next-Generation Electronics (ISNE), Invited, pp. 1-2, (2016).

  85. K.L. Pey, R. Thamankar, S. Mei, M. Bosman, N. Raghavan and K. Shubhakar, “Understanding the switching mechanism in RRAM using in-situ TEM”, IEEE Silicon Nanoelectronics Workshop (SNW), Invited, pp. 1-2, (2016).

  86. K.L. Pey, A. Ranjan, R. Thamankar, K. Shubhakar, N. Raghavan and S.J. O’Shea, “Random telegraph noise study in HfO2 dielectric stacks using STM/CAFM: Analysis of local defects, degradation and breakdown”, IEEE International Nanoelectronics Conference (INEC), Invited, pp. 1-2, (2016).

  87. A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, J. Molina, S.J. O’Shea, M. Bosman and K.L. Pey, “CAFM based spectroscopy of stress-induced defects in HfO2 with experimental evidence of the clustering model and metastable vacancy defect state”, IEEE International Reliability Physics Symposium (IRPS), pp. 7A-4, (2016).

  88. S. Mei, N. Raghavan, K. Shubhakar, M. Bosman and K.L. Pey, “Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ – interfacial layer stacks”, IEEE International Reliability Physics Symposium (IRPS), pp. 7A-2, (2016).

  89. R. Thamankar, N. Raghavan, J. Molina, F.M. Puglisi, S.J. O’Shea, K. Shubhakar, L. Larcher, P. Pavan, A. Padovani and K.L. Pey, “Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy”, Journal of Applied Physics, Vol. 119, No. 8, 084304, (2016).

  90. S. Mei, M. Bosman, N. Raghavan, X. Wu and K.L. Pey, “Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices”, Microelectronics Reliability, Vol. 61, Issue 6, pp.71-77, (2016).

  91. N. Raghavan, M. Bosman and K.L. Pey, “Probabilistic insight to possibility of new filament nucleation during repeated cycling of conducting bridge memory”, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 55, Issue 9, pp. 1412-1416, (2015).

  92. N. Raghavan, D.D. Frey, M. Bosman and K.L. Pey, “Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach”, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 55, Issue 9, pp. 1422-1426, (2015).

  93. K. Shubhakar, M. Bosman, O. A. Neucheva, Y. C. Loke, N. Raghavan, R. Thamankar, A. Ranjan, S. J. O'Shea, and K. L. Pey, “An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis”, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 55, Issue 9, pp. 1450-1455, (2015).

  94. R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, B. Govoreanu, A. Belmonte, D. Linten and M. Jurczak, “Causes and consequences of the stochastic aspect of filamentary RRAM”, Microelectronic Engineering, Vol. 147, pp. 171-175, (2015).

  95. X. Wu, S. Mei, M. Bosman, N. Raghavan, X.X. Zhang, D. Cha, K. Li and K.L. Pey, “Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices”, Advanced Electronic Materials, Issue 1, No. 11, (2015).

  96. N. Raghavan, W. H. Liu, R. Thamankar, M. Bosman and K. L. Pey, “Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis”, 22nd International IEEE Symposium Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 149-153, (2015).

  97. A. Ranjan, K. Shubhakar, N. Raghavan, R. Thamankar, M. Bosman, S. J. O'Shea, and K. L. Pey. "Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps”, 22nd International IEEE Symposium Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 458-462, (2015).

  98. N. Raghavan, M. Bosman, and K. L. Pey, “Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer”, IEEE International Reliability Physics Symposium (IRPS), pp. 5A-2, (2015).

  99. N. Raghavan, D. D. Frey, M. Bosman, and K. L. Pey, “Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM”, IEEE International Reliability Physics Symposium (IRPS), pp. 5B-2, (2015).

  100. N. Raghavan, M. Bosman, D.D. Frey and K.L. Pey, “Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2266-2271, (2014).

  101. N. Raghavan, M. Bosman and K.L. Pey, “Assessment of read disturb immunity in conducting bridge memory devices – A thermodynamic perspective”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2295-2299, (2014).

  102. N. Raghavan, “Performance and reliability trade-offs for high-κ RRAM”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Invited Paper, Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 2253-2257, (2014).

  103. N. Raghavan, K.L. Pey, D.D. Frey and M. Bosman, “Impact of ionic drift and vacancy defect passivation on TDDB statistics and lifetime enhancement of metal gate high-κ stacks”, 52nd IEEE International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, 5B.4.1-5B.4.7, (2014).

  104. N. Raghavan, K.L. Pey, D.D. Frey and M. Bosman, “Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework”, 52nd IEEE International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, MY.9.1-MY.9.7, (2014).

  105. N. Raghavan, K.L. Pey and K. Shubhakar, “High-κ dielectric breakdown in nanoscale logic devices – Scientific insight and technology impact”, Microelectronics Reliability, Introductory Invited Paper, Vol. 54, Issue 5, pp.847-860, (2014).

  106. L. Goux, N. Raghavan, A. Fantini, R. Nigon, S. Strangio, R. Degraeve, G.S. Kar, Y.Y. Chen, F. De Stefano, V.V. Afanas’ev and M. Jurczak, “On the bipolar resistive switching characteristics of Al2O3 and HfO2 based memory cells operated in the soft-breakdown regime”, Journal of Applied Physics, Vol. 116, 134502, (2014).

  107. K. Shubhakar, K.L. Pey, N. Raghavan, M. Bosman, S.S. Kushvaha, Z.R. Wang and S.J. O’Shea, “Impact of local structural and electrical property of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Microelectronics Reliability, Vol. 54, Issues 9-10, pp. 1712-1717, (2014).

  108. K.L. Pey, N. Raghavan, X. Wu and M. Bosman, “Filamentary switching with semiconducting bottom electrode – Physical insight and advantages”, International Electron Devices and Materials Symposium (IEDMS), Hualien, Taiwan, Invited, pp.1-3, (2014).

  109. R. Degraeve, A. Fantini, N. Raghavan, L. Goux, S. Clima, Y.Y. Chen, A. Belmonte, S. Cosemans, B. Govoreanu, D.J. Wouters, Ph. Roussel, G.S. Kar, G. Groeseneken and M. Jurczak, “Hourglass concept for RRAM: a dynamic and statistical device model”, 21st IEEE International Symposium on the Physics and Failure Analysis of Integrated Circuits (IPFA), Singapore, Invited, pp. 1-4, (2014).

  110. W.H. Liu, A. Padovani, L. Larcher, N. Raghavan and K.L. Pey, “Analysis of correlated gate and drain random telegraph noise in post soft-breakdown TiN/HfLaO/SiOx nMOSFETs”, IEEE Electron Device Letters, Vol. 35, No. 2, pp.157-159, (2014).

  111. K. Shubhakar, N. Raghavan and K.L. Pey, “Nanoscopic study of HfO2 based high-κ dielectric stacks and its failure analysis”, International Journal of Materials Science and Engineering, Vol. 2, No. 2, pp.81-86, (2014).

  112. N. Raghavan, R. Degraeve, A. Fantini, L. Goux, D.J. Wouters, G. Groeseneken and M. Jurczak, “Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability”, IEEE International Electron Device Symposium (IEDM), Washington, USA, pp. 21.1.1-21.1.4, (2013).

  113. N. Raghavan, A. Padovani, X. Li, X. Wu, V.L. Lo, M. Bosman, L. Larcher and K.L. Pey, “Resilience of ultra-thin oxynitride films to percolative wear-out and reliability implications for high-κ stacks at low voltage stress”, Journal of Applied Physics, Vol. 114, 094504, (2013).

  114. N. Raghavan, X. Wu, M. Bosman and K.L. Pey, “Feasibility of SILC recovery in sub-10Ǻ EOT advanced metal gate – high-κ stacks”, IEEE Electron Device Letters, Vol. 34, No. 8, pp.1053-1055, (2013).

  115. A. Padovani, N. Raghavan, L. Larcher and K.L. Pey, “Identifying the first layer to fail in dual layer SiOx / HfSiON gate dielectric stacks”, IEEE Electron Device Letters, Vol. 34, No. 10, pp.1289-1291, (2013).

  116. Y.Y. Chen, M. Komura, R. Degraeve, B. Govoreanu, L. Goux, A. Fantini, N. Raghavan, S. Clima, L. Zhang, A. Belmonte, A. Redolfi, G.S. Kar, G. Groeseneken and M. Jurczak, “Improvement of data retention in HfO2 / Hf 1T-1R RRAM cell under low operating current”, IEEE International Electron Device Symposium (IEDM), Washington, USA, pp.10.1.1-10.1.4, (2013).

  117. R. Degraeve, A. Fantini, N. Raghavan, Y.Y. Chen, L. Goux, S. Clima, S. Cosemans, B. Govoreanu, D.J. Wouters, P.J. Roussel, G.S. Kar, G. Groeseneken and M. Jurczak, “Modeling SET and RESET transients in Hf-based RRAM devices using the hourglass approach”, 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, Virginia, USA, Invited, pp.1-2, (2013).

  118. K.L. Pey, K. Shubhakar, N. Raghavan, X. Wu and M. Bosman, “Impact of local variations in high-κ dielectric on breakdown and recovery characteristics of advanced gate stacks”, IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Invited, pp.1-2, (2013).

  119. N. Raghavan, R. Degraeve, A. Fantini, L. Goux, D.J. Wouters, G. Groeseneken and M. Jurczak, “Modeling the impact of reset depth on vacancy induced filament perturbations in HfO2 RRAM”, IEEE Electron Device Letters, Vol. 34, No. 5, pp.614-616, (2013).

  120. N. Raghavan, R. Degraeve, L. Goux, A. Fantini, D.J. Wouters, G. Groeseneken and M. Jurczak, “RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM”, IEEE VLSI Technology Symposium (VLSI), Kyoto, Japan, T163-T164, (2013).

  121. N. Raghavan, A. Padovani, X. Wu, K. Shubhakar, M. Bosman, L. Larcher and K.L. Pey, “The 'buffering' role of high-κ in post breakdown degradation immunity of advanced dual layer dielectric gate stacks”, 51st IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp.5A.3.1-5A.3.8, (2013).

  122. N. Raghavan, R. Degraeve, A. Fantini, L. Goux, S. Strangio, B. Govoreanu, D.J. Wouters, G. Groeseneken and M. Jurczak, “Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability”, 51st IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp.5E.3.1-5E.3.7, (2013).

  123. N. Raghavan, A. Fantini, R. Degraeve, P.J. Roussel, L. Goux, B. Govoreanu, D.J. Wouters, G. Groeseneken and M. Jurczak, “Statistical insight into controlled forming and forming-free stacks for HfOx RRAM”, 18th International Symposium on Insulating Films on Semiconductors (INFOS), Krakow, Poland, Microelectronic Engineering, Vol. 109, Issue 9, pp.177-181, (2013).

  124. R. Degraeve, A. Fantini, N. Raghavan, Y.Y. Chen, L. Goux, S. Clima, S. Cosemans, B. Govoreanu, D.J. Wouters, P.J. Roussel, G.S. Kar, G. Groeseneken and M. Jurczak, “Modeling RRAM set/reset statistics resulting in guidelines for optimized operation”, IEEE VLSI Technology Symposium (VLSI), Kyoto, Japan, T98-T99, (2013).

  125. L. Goux, A. Fantini, R. Degraeve, N. Raghavan, R. Nigon, S. Strangio, G.S. Kar, D.J. Wouters, Y.Y. Chen, M. Komura, F. De Stefano, V.V. Afanas’ev and M. Jurczak, “Understanding of the intrinsic characteristics and memory trade-offs of sub-µA filamentary RRAM operation”, IEEE VLSI Technology Symposium (VLSI), Kyoto, Japan, T162-T163, (2013).

  126. K.L. Pey, N. Raghavan, W.H. Liu, X. Wu, K. Shubhakar and M. Bosman, “Real-time analysis of ultra-thin gate dielectric breakdown and recovery – A reality”, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China, Invited, pp.1-13, (2013).

  127. A. Fantini, L. Goux, R. Degraeve, D.J. Wouters, N. Raghavan, G.S. Kar, A. Belmonte, Y.Y. Chen, B. Govoreanu and M. Jurczak, “Intrinsic variability in HfO2 RRAM”, 5th IEEE International Memory Workshop (IMW), Monterey, California, pp.30-33, (2013).

  128. B. Govoreanu, A. Ajaykumar, H. Lipowicz, Y.Y. Chen, J.C. Liu, R. Degraeve, L. Zhang, S. Clima, L. Goux, I.P. Radu, A. Fantini, N. Raghavan, G.S. Kar, W. Kim, A. Redolfi, D.J. Wouters, L. Altimime and M. Jurczak, “Performance and reliability of ultra-thin HfO2-based RRAM (UTO-RRAM), 5th IEEE International Memory Workshop (IMW), Monterey, California, pp.48-51, (2013).

  129. S. Clima, R. Degraeve, K. Sankaran, Y.Y. Chen, A. Fantini, A. Belmonte, L. Zhang, N. Raghavan, L.Goux, B. Govoreanu, D.J. Wouters, M. Jurczak and G. Pourtois, “Switching aspects of RRAM – First principles and model simulations insight”, American Vacuum Society 60th International Symposium and Exhibition – Electronic Materials and Processing (AVS), Invited, Long Beach, California, USA, (2013).

  130. X. Wu, D. Cha, M. Bosman, N. Raghavan, D.B. Migas, V.E. Borisenko, X.X. Zhang, K. Li and K.L. Pey, “Intrinsic nano-filamentation in resistance switching”, Journal of Applied Physics, Vol. 113, 114503, (2013).

  131. K. Shubhakar, K.L. Pey, N. Raghavan, M. Bosman, S.S. Kushvaha, Z.R. Wang and S.J. O’Shea, “Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics”, 18th International Symposium on Insulating Films on Semiconductors (INFOS), Krakow, Poland, Microelectronic Engineering, Vol. 109, Issue 9, pp.364-369, (2013).

  132. A.L. Danilyuk, D.B. Migas, M.A. Danilyuk, V.E. Borisenko, X. Wu, N. Raghavan and K.L. Pey, “Multiphonon ionization of traps formed in hafnium oxide by electrical stress”, Physica Status Solidi A, Vol. 210, Issue 2, pp.361-366, (2013).

  133. N. Raghavan, X. Wu, W.H. Liu, M. Bosman and K.L. Pey, “Physical Analysis and Insight into Filamentary Switching in Nickel Electrode based RRAM”, 3rd International Workshop on Simulation and Modeling of Memory Devices (IWSMM), Milan, Italy, (2012).

  134. N. Raghavan, K.L. Pey, X. Wu, W.H. Liu and M. Bosman, "Percolative model and thermodynamic analysis of oxygen ion mediated resistive switching", IEEE Electron Device Letters, Vol. 33, No. 5, pp.712-714, (2012).

  135. N. Raghavan, K.L. Pey, K. Shubhakar, X. Wu, W.H. Liu and M. Bosman, "Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks", IEEE International Reliability Physics Symposium (IRPS), Anaheim, Orange County, California, 6A.1.1 – 6A.1.11, (2012).

  136. M.A. Danilyuk, D.B. Migas, A.L. Danilyuk, V.E. Borisenko, X. Wu, N. Raghavan and K.L. Pey, “Thermal reversible breakdown and resistivity switching in hafnium dioxide”, Journal of Nano- and Electronic Physics, Vol. 4, No. 1,01014, (2012).

  137. K.L. Pey, N. Raghavan, X. Wu, W.H. Liu and M. Bosman, “Dielectric breakdown – recovery in logic and resistive switching in memory – Bridging the gap between the two phenomena”, 11thInternational Conference on Solid State and Integrated Circuit Technology (ICSICT), Xian, China, Invited, pp.1-6, (2012).

  138. K. Shubhakar, K.L. Pey, M. Bosman, R. Thamankar, Z.R. Wang, N. Raghavan, S.S. Kushvaha and S.J. O'Shea, "Nanoscale physical analysis of localized breakdown events in HfO2 based dielectric stacks : A correlation study of STM-induced breakdown with C-AFM and TEM", IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, pp.1-7, (2012).

  139. W.H. Liu, K.L. Pey, N. Raghavan, X. Wu and M. Bosman, "Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications", Journal of Applied Physics, Vol. 111, Issue 2, 024101, (2012).

  140. N. Raghavan, K.L. Pey, X. Li, W.H. Liu, X. Wu, M. Bosman and T. Kauerauf, “Very low reset current in RRAM achieved in the oxygen vacancy controlled regime”, IEEE Electron Device Letters, Vol. 32, No. 6, pp.716-718, (2011).

  141. N. Raghavan, K.L. Pey, W.H. Liu, X. Wu, X. Li and M. Bosman, “Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM”, 17th International Symposium on Insulating Films on Semiconductors (INFOS), Grenoble, France. Published in Microelectronic Engineering, Vol. 88, Issue 7, pp.1124-1128, (2011).

  142. K.L. Pey, N. Raghavan, X. Wu, W.H. Liu, X. Li, M. Bosman, K. Shubhakar, Z.Z. Lwin, Y.N. Chen, H. Qin and T. Kauerauf, "Physical analysis of breakdown in high-κ / metal gate stacks using TEM/EELS and STM for reliability enhancement", 17th International Symposium on Insulating Films on Semiconductors (INFOS), Invited Paper, Grenoble, France. Published in Microelectronic Engineering, Vol. 88, Issue 7, pp.1365-1372, (2011).

  143. W.H. Liu, K.L. Pey, X. Wu, N. Raghavan, A. Padovani, L. Larcher, L. Vandelli, M. Bosman and T. Kauerauf, "Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal", Applied Physics Letters, Vol. 99, Issue 23, 232909, (2011).

  144. X. Wu, K.L. Pey, N. Raghavan, W.H. Liu, X. Li, P. Bai, G. Zhang and M. Bosman, "Using post-breakdown conduction study in MIS structure to better understand resistive switching mechanism in MIM stack", Nanotechnology, Vol. 22, No. 45, 455702, (2011).

  145. X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H.Y. Yu, N. Singh, G.Q. Lo, X.X. Zhang and K.L. Pey, "Chemical insight into origin of forming-free RRAM devices", Applied Physics Letters, Vol. 19, Issue 13, 133504, (2011).

  146. X. Wu, K. Li, N. Raghavan, M. Bosman, Q.X. Wang, D. Cha, X.X. Zhang and K.L. Pey, "Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based RRAM", Applied Physics Letters, Vol. 99, 093502, (2011). (Also selected to be published in the Virtual Journal of Nanoscale Science and Technology, Sept'11 Issue).

  147. N. Raghavan, W.H. Liu, X. Li, X. Wu, M. Bosman and K.L. Pey, "Filamentation mechanism of resistive switching in fully-silicided high-κ gate stacks", IEEE Electron Device Letters, Vol. 32, No. 4, pp.455-457, (2011).

  148. N. Raghavan, K.L. Pey, X. Wu, W.H. Liu, X. Li, M. Bosman and T. Kauerauf, "Oxygen soluble gate electrodes for prolonged high-κ gate stack reliability", IEEE Electron Device Letters, Vol. 32, No. 3, pp.252-254, (2011).

  149. N. Raghavan, K.L. Pey, K. Shubhakar and M. Bosman, "Modified percolation model for polycrystalline high-κ gate dielectric stack with grain boundary defects", IEEE Electron Device Letters, Vol. 32, No. 1, pp.78-80, (2011).

  150. Z.Z. Lwin, K.L. Pey, N. Raghavan, Y.N. Chen and S. Mahapatra, "New leakage mechanism and dielectric breakdown layer detection in metal nanocrystals embedded dual layer memory gate stack", IEEE Electron Device Letters, Vol. 32, No. 6, pp.800-802, (2011).

  151. K. Shubhakar, K.L. Pey, S.S. Kushvaha, S.J. O'Shea, N. Raghavan, M. Bosman, M. Kouda, K. Kakushima and H. Iwai, "Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy", Applied Physics Letters, Vol. 98, 072902, (2011).

  152. W.H. Liu, K.L. Pey, N. Raghavan, X. Wu and M. Bosman, "Random telegraph noise reduction in metal gate high-κ stacks by bipolar switching and the performance boosting technique", IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp.182-189, (2011).

  153. K. Shubhakar, K.L. Pey, S.S. Kushvaha, S.J. O'Shea, M. Bosman, N. Raghavan, M. Kouda, K. Kakushima, Z.R. Wang, H.Y. Yu and H. Iwai, "Nanoscale physical study of polycrystalline high-κ gate dielectric stacks and proposed reliability enhancement techniques", IEEE International Reliability Physics Symposium (IRPS), Monterey, California, pp.786-791, (2011).

  154. A.L. Danilyuk, D.B. Migas, M.A. Danilyuk, V.E. Borisenko, X. Wu, N. Raghavan and K.L. Pey, "Thermal formation of switching resistivity nanowires in hafnium dioxide", Proceedings of the International Conference on Nanomeeting, Minsk, Belarus, pp.39-42, (2011).

  155. N. Raghavan, K.L. Pey, W.H. Liu and M. Bosman, "Post breakdown gate current low frequency noise spectrum as a detection tool for high-κ and interfacial layer breakdown", IEEE Electron Device Letters, Vol. 31, No. 9, pp.1035-1037, (2010).

  156. X. Li, W.H. Liu, N. Raghavan, M. Bosman and K.L. Pey, “Resistive switching in NiSi gate metal-oxide-semiconductor transistors”, Applied Physics Letters, 97, 202904, (2010).

  157. A. Padovani, L. Morassi, N. Raghavan, L. Larcher, W.H. Liu, K.L. Pey and G. Bersuker, "A physical model for post-breakdown digital gate current noise", IEEE Electron Device Letters, Vol. 31, No. 9, pp.1032-1034, (2010).

  158. K.L. Pey, X. Wu, W.H. Liu, X. Li, N. Raghavan, K. Shubhakar and M. Bosman, "An overview of physical analysis of nanosize conductive path in ultra-thin SiON and high-κ gate dielectrics in nanoelectronic devices", IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Invited Paper, pp.253-264, (2010).

  159. N. Raghavan, K.L. Pey, W.H. Liu, X. Wu and X. Li, “Unipolar Recovery of Dielectric Breakdown in Fully Silicided high-κ gate stacks and its reliability implications”, Applied Physics Letters, 96, 142901, (2010).

  160. N. Raghavan, K.L. Pey, W.H. Liu and X. Li, “New statistical model to decode the reliability and Weibull Slope of High-κ and Interfacial Layer in a Dual Layer Dielectric Stack”, IEEE International Reliability Physics Symposium (IRPS), Anaheim, California, pp.778-786, (2010).

  161. K.L. Pey, N. Raghavan, X. Li, W.H. Liu, K. Shubhakar, X. Wu and M. Bosman, “New insight into TDDB and Post Breakdown Reliability of Novel High-κ Gate Dielectric Stacks”, IEEE International Reliability Physics Symposium (IRPS), Invited Paper, Anaheim, California, pp.354-363, (2010).

  162. X. Wu, D.B. Migas, X. Li, M. Bosman, N. Raghavan, V.E. Borisenko and K.L. Pey, "Role of oxygen vacancies in HfO2 based gate stack breakdown" Applied Physics Letters, Vol. 96, 172901, (2010).

  163. X. Wu, K.L. Pey, G. Zhang, P. Bai, X. Li, W.H. Liu and N. Raghavan, "Electrode material dependent breakdown and recovery in advanced high-κ gate stacks", Applied Physics Letters, Vol. 96, 202903, (2010).

  164. N. Raghavan, K.L. Pey and X. Li, “Detection of high-κ and interfacial layer breakdown using the tunneling mechanism in a dual layer dielectric stack”, Applied Physics Letters, Vol. 95, 222903, (2009).

  165. N. Raghavan, X. Wu, X. Li, W.H. Liu, V.L. Lo and K.L. Pey, “Post breakdown reliability enhancement of ULSI circuits with novel gate dielectric stacks”, IEEE International Symposium on Integrated Circuits (ISIC), Singapore, pp.505-513, (2009).

PROGNOSTICS AND HEALTH MANAGEMENT (PHM)

(2014 - 2022)

  1. K. Pugalenthi, S.L.H. Lim, H. Park, S. Hussain and N. Raghavan, “Prognosis of LED Lumen Degradation using Bayesian Optimized Neural Network Approach”, Microelectronics Reliability, Accepted, In Press, (2022).

  2. S.L.H. Lim, P.L.T, Duong, H. Park and N. Raghavan, “Expedient Validation of LED Reliability with Anomaly Detection through Multi-Output Gaussian Process Regression”, Microelectronics Reliability, Accepted, In Press, (2022).

  3. K. Pugalenthi, H. Park, S. Hussain and N. Raghavan, “Remaining Useful Life Prediction of Lithium-Ion Batteries Using Neural Networks with Adaptive Bayesian Learning”, Sensors, 22(10), p.3803, (2022).

  4. K. Pugalenthi, H. Park, S. Hussain and N. Raghavan, “Predicting Lumen Degradation of Light Emitting Diodes Using Hybrid Particle Filter Trained Neural Networks”, IEEE Access, Vol. 9, pp.167292-167304, (2021).

  5. L.S.L. Harry, P.L.T. Duong, H. Park and N. Raghavan, “Bias Suppression Framework for Detrending Mean of Multi-Output Gaussian Process Regression in LED Remaining Storage Life Prognosis”, IEEE Access, Vol. 9, pp.166639-166657, (2021).

  6. K. Pugalenthi, H. Park, S. Hussain and N. Raghavan, “Hybrid Particle Filter Trained Neural Network for Prognosis of Lithium-Ion Batteries”, IEEE Access, Vol. 9, pp.135132-135143, (2021).

  7. K. Pugalenthi, P.L.T. Duong, J. Doh, S. Hussain, M.H. Jhon and N. Raghavan, “Online Prognosis of Bimodal Crack Evolution for Fatigue Life Prediction of Composite Laminates Using Particle Filters”, Applied Sciences, 11(13), p.6046, (2021).

  8. M. Tanwar, H. Park and N. Raghavan, “Multistate Diagnosis and Prognosis of Lubricating Oil Degradation Using Sticky Hierarchical Dirichlet Process–Hidden Markov Model Framework”, Applied Sciences, Vol. 11(14), p.6603, (2021).

  9. M. Tanwar, N. Raghavan and S. Khanam, “Condition Based Maintenance Policy for Crankcase Lubricating Oil in Diesel Locomotives”, IEEE International Conference on Industrial Engineering and Engineering Management (IEEM) (pp. 1593-1598), (2021).

  10. P.L.T. Duong, S. Hussain, M.H. Jhon and N. Raghavan, “Data Driven Prognosis of Fracture Dynamics Using Tensor Train and Gaussian Process Regression”, IEEE Access, Vol. 8 (2020): 222256-222266.

  11. S.L.H. Lim, P.L.T. Duong, H. Park, P. Singh, C.M. Tan, and N. Raghavan, “Assessing multi-output Gaussian process regression for modeling of non-monotonic degradation trends of light emitting diodes in storage”, Microelectronics Reliability 114 (2020): 113794.

  12. K. Pugalenthi, H. Park and N. Raghavan, “Piecewise Model-Based Online Prognosis of Lithium-Ion Batteries Using Particle Filters”, IEEE Access, 8, pp.153508-153516, (2020).

  13. M. Tanwar and N. Raghavan, “Lubricating Oil Remaining Useful Life Prediction Using Multi-Output Gaussian Process Regression”, IEEE Access, 8, pp.128897-128907, (2020).

  14. S. Hussain, P.L.T. Duong, N. Raghavan and M.H. Jhon, “Temporal Convolutional Network Based Transfer Learning for Structural Health Monitoring of Composites”, Pacific-Asia Conference on Knowledge Discovery and Data Mining (pp. 141-152). Springer, Cham, (2020).

  15. S.L.H. Lim, P.L.T. Duong and N. Raghavan, “Exploration of Multi-Output Gaussian Process Regression for Residual Storage Life Prediction in Lithium Ion Battery”, IEEE Prognostics and Health Management Conference, pp. 263-269, Besancon, France, (2020).

  16. P.L.T. Duong, N. Raghavan, S. Hussain and M.H. Jhon, “Tensor Train Decomposition for Data-Driven Prognosis of Fracture Dynamics in Composite Materials”, IEEE Aerospace Conference, pp. 1-7, Montana, USA, (2020).

  17. K. Pugalenthi, H. Park and N. Raghavan, “Prognosis of power MOSFET resistance degradation trend using artificial neural network approach”, Microelectronics Reliability, 100, 113467, (2019).

  18. M. Tanwar and N. Raghavan, "Lubrication oil degradation trajectories: Prognosis with ARIMA and Bayesian Models", IEEE International Conference on Sensing, Diagnostics, Prognostics and Control (SDPC), pp. 1-6, (2019).

  19. M. Tanwar and N. Raghavan, "Lubrication oil degradation monitoring and prognostics using Wiener Process", IEEE International Conference on Sensing, Diagnostics, Prognostics and Control (SDPC), pp. 1-5, (2019).

  20. K. Pugalenthi and N. Raghavan, "Study on Partial Stratified Resampling for Particle Filter Based Prognosis on Li-Ion Batteries", IEEE Prognostics and System Health Management Conference (PHM-Chongqing), pp.1176-1181, (2018).

  21. K. Pugalenthi and N. Raghavan, "Roughening Particle Filter Based Prognosis on Power MOSFETs Using ON-Resistance Variation", IEEE Prognostics and System Health Management Conference (PHM-Chongqing), pp.1170-1175, (2018).

  22. P.L.T. Duong and N. Raghavan, "Prognostic Health Management for LED with Missing Data: Multi-task Gaussian Process Regression Approach", IEEE Prognostics and System Health Management Conference (PHM-Chongqing), pp.1182-1187, (2018).

  23. K. Pugalenthi and N. Raghavan, “A holistic comparison of the different resampling algorithms for particle filter based prognosis using lithium ion batteries as a case study”, Microelectronics Reliability, Vol. 91, pp.160-169, (2018).

  24. P.L.T. Duong, H. Park and N. Raghavan, “Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes”, Microelectronics Reliability, Vol. 88, pp.80-84, (2018).

  25. P.L.T. Duong, H. Park and N. Raghavan, “Application of expectation maximization and Kalman smoothing for prognosis of lumen maintenance life for light emitting diodes”, Microelectronics Reliability, Vol. 87, pp.206-212, (2018).

  26. P.L.T. Duong and N. Raghavan, “Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery”, Microelectronics Reliability, Vol. 81, pp. 232-243, (2018).

  27. C.I. Ossai and N. Raghavan, “Stochastic model for Lithium-ion batteries lifecycle prediction and parametric uncertainties”, 64th IEEE Annual Reliability and Maintainability Symposium (RAMS), pp. 1-6, (2018).

  28. C.I. Ossai and N. Raghavan, “Non-linear mixed effects model-based prognostics for lithium ion battery charge decay”, 64th IEEE Annual Reliability and Maintainability Symposium (RAMS), pp. 1-6, (2018).

  29. X. Yi, P.L.T. Duong, N. Raghavan and D.W. Rosen, "A rapid design exploration framework under additive manufacturing process uncertainty", Pro-AM Symposium, Singapore, pp.1-4, (2018).

  30. P.L.T. Duong and N. Raghavan, “Uncertainty quantification in prognostics: A data-driven polynomial chaos approach”, IEEE Conference on Prognostics and Health Management (PHM), pp. 135-142, (2017).

  31. P.L.T. Duong and N. Raghavan, “A meta-heuristic approach to remaining useful life estimation of systems subject to multiple degradation mechanisms”, IEEE Conference on Prognostics and Health Management (PHM), pp. 227-233, (2017).

  32. P.L.T. Duong, T.T. Tran and N. Raghavan, “Application of multiplicative dimensional reduction method for uncertainty quantification and sensitivity analysis of MEMS electrostatic actuators”, Microelectronics Reliability, Vol. 76, pp. 619-625, (2017).

  33. C.I. Ossai and N. Raghavan, “Statistical characterization of the state-of-health of lithium-ion batteries with Weibull distribution function – A consideration of random effect model in charge capacity decay estimation”, Batteries, 3(4), 32, (2017).

  34. N. Raghavan and K.L. Pey, “Percolation framework and Monte Carlo techniques for improved probabilistic design of variability in products and systems”, 6th International Conference on Research into Design (ICoRD), pp. 1-13, (2017).

  35. N. Raghavan and D.D. Frey, “Real-time update of multi-state system reliability using prognostics data-driven techniques”, 62nd IEEE Annual Reliability and Maintainability Symposium (RAMS), pp.1-5, (2016).

  36. N. Raghavan and D.D. Frey, “Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms”, 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 55, No. 9, pp. 1297-1301, (2015).

  37. N. Raghavan and D.D. Frey, “Remaining useful life estimation for systems subject to multiple degradation mechanisms”, IEEE Conference on Prognostics and Health Management (PHM), pp. 1-8, (2015).

  38. N. Raghavan, D.D. Frey and K.L. Pey, “Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory”, 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Microelectronics Reliability, Vol. 54, Issue 9, pp.1729-1734, (2014).

  39. N. Raghavan, K.L. Pey and D.D. Frey, "Noise based prognostic design for real-time degradation analysis of dielectric breakdown", 60th IEEE Annual Reliability and Maintainability Symposium (RAMS), pp.370-376, Orlando, Florida, (2013).

  40. N. Raghavan, K. Shubhakar and K.L. Pey, "Monte Carlo evidence for need of improved percolation model for non-Weibullian degradation in high-κ dielectrics", 60th IEEE Annual Reliability and Maintainability Symposium (RAMS), pp.839-845, Orlando, Florida, (2013).

DESIGN FOR ADDITIVE MANUFACTURING + METAL NANOLAMINATES +

POLYMER NANOCOMPOSITES (2017 - 2022)

  1. R. Sahay, Y.C. Tu, I. Aziz, A.S. Budiman, C.M. Tan, P.S. Lee, O. Thomas and N. Raghavan, “Investigation of the reliability of nano- crystalline-amorphous layers deposited on polymer substrates for flexible electronic applications”, Scientific Reports, To Be Submitted, (2022).

  2. U. Kizhakkinan, S. Seetharaman, N. Raghavan and D.W. Rosen, “Laser powder bed fusion additive manufacturing of maraging steel: A review”, Acta Materialia, To Be Submitted, (2022).

  3. U. Kizhakkinan, P.L.T. Duong, R. Laskowski, G. Vastola, D.W. Rosen and N. Raghavan, “Development of a Surrogate Model for High-Fidelity Laser Powder-Bed Fusion using Tensor Train and Gaussian Process Regression”, Journal of Intelligent Manufacturing, Revision Under Review, (2022).

  4. U. Kizhakkinan, D.W. Rosen and N. Raghavan, “Experimental Investigation of Fracture Toughness of Fused Deposition Model Printed PLA Parts”, Materials Today Proceedings, Under Review, (2022).

  5. R.K. Balaraman, S. Hussain, C. Ford, J.K. Ong, Q.Y. Tan, U.X. Tan and N. Raghavan, “Prediction of Part Density in Additively Manufactured Maraging Steel with Supervised Machine Learning using Pyrometer Data”, Materials Today Proceedings, Under Review, (2022).

  6. J. Doh, N. Raju, N. Raghavan, D.W. Rosen and S. Kim, “Bayesian inference-based decision of fatigue life model for metal additive manufacturing considering effects of build orientation and post-processing”, International Journal of Fatigue, Vol. 155, p.106535, (2022).

  7. R. Sahay, A.S. Budiman, I. Aziz, E. Navarro, S. Escoubas, T.W. Cornelius, F.E. Gunawan, C. Harito, P.S. Lee, O. Thomas and N. Raghavan, “Crystallographic Anisotropy Dependence of Interfacial Sliding Phenomenon in a Cu (16)/Nb (16) ARB (Accumulated Rolling Bonding) Nanolaminate”, Nanomaterials, Vol. 12(3), p.308, (2022).

  8. A.S. Budiman, R. Sahay, K. Agarwal, R. Fajarna, F.E. Gunawan, A. Baji and N. Raghavan, "Modeling Impact Mechanics of 3D Helicoidally Architected Polymer Composites Enabled by Additive Manufacturing for Lightweight Silicon Photovoltaics Technology", Polymers, Vol. 14, No. 6 (2022): 1228.

  9. J. Doh, S.I. Park, Q. Yang and N. Raghavan, “Uncertainty Quantification of Percolating Electrical Conductance for Wavy Carbon Nanotube-Filled Polymer Nanocomposites Using Bayesian Inference”, Carbon, Vol. 172, pp. 308-323, (2021).

  10. A.S. Budiman, R. Sahay, H. Parveen, S.K. Tippabhotla, I. Radchenko and N. Raghavan, “Interface-mediated plasticity and fracture in nanoscale Cu/Nb multilayers as revealed by in situ clamped microbeam bending”, Materials Science and Engineering: A 803 (2021): 140705.

  11. R. Sahay, K. Agarwal, A. Subramani, N. Raghavan, A.S. Budiman and A. Baji, “Helicoidally Arranged Polyacrylonitrile Fiber-Reinforced Strong and Impact-Resistant Thin Polyvinyl Alcohol Film Enabled by Electrospinning-Based Additive Manufacturing”, Polymers, 12(10), p.2376, (2020).

  12. J. Doh, Q. Yang and N. Raghavan, “Reliability-based robust design optimization of polymer nanocomposites to enhance percolated electrical conductivity considering correlated input variables using multivariate distributions”, Polymer, 186, 122060, (2020).

  13. Y. Xiong, P.L.T. Duong, D. Wang, S.I, Park, Q. Ge, N. Raghavan and D.W. Rosen, “Data-driven design space exploration and exploitation for design for additive manufacturing”, Journal of Mechanical Design, Vol. 141(10), (2019).

  14. J. Doh, S.I. Park, Q. Yang and N. Raghavan, “The effect of carbon nanotube chirality on the electrical conductivity of polymer nanocomposites considering tunneling resistance”, Nanotechnology, 30(46), 465701, (2019).

  15. J. Doh, N. Raghavan and J. Lee, “Prediction of percolation threshold and electrical conductivity characteristics for polymer nanocomposites according to geometric parameters of CNTs”, Transactions of the Korean Society of Mechanical Engineers, A, 43(4), 297-306, (2019).

  16. R.K. Adhitan and N. Raghavan, “Transient thermomechanical modeling of stress evolution and re-melt volume fraction in electron beam additive manufacturing process”, Procedia Manufacturing, Vol. 11, pp.571-583, (2017).


BACK-END-OF-LINE (BEOL) RELIABILITY

2005-2009

  1. A. Heryanto, K.L. Pey, Y.K. Lim, N. Raghavan, W. Liu, J. Wei, C.L. Gan and J.B. Tan, "Stress migration risk on electromigration reliability in advanced narrow line copper interconnects", Journal of Applied Physics, Vol. 110, Issue 8, 083702, (2011).

  2. A. Heryanto, K.L. Pey, Y.K. Lim, W. Liu, N. Raghavan, J. Wei, C.L. Gan, M.K. Lim and J.B. Tan, "The effect of stress migration on electromigration in dual damascene copper interconnects", Journal of Applied Physics, Vol. 109, Issue 1, 013716, (2011).

  3. A. Heryanto, K.L. Pey, Y.K. Lim, W. Liu, J. Wei, N. Raghavan, J.B. Tan and D.K. Sohn, “Study of stress migration and electromigration interaction in copper / low-κ interconnects”, IEEE International Reliability Physics Symposium (IRPS), Anaheim, California, pp.586-590, (2010).

  4. W. Li, C.M. Tan and N. Raghavan – “Predictive dynamic simulation for void nucleation during electromigration in ULSI interconnects”, Journal of Applied Physics, Vol. 105, 014305, (2009).

  5. N. Raghavan and K. Prasad, "Statistical outlook into the physics of failure for copper low-K intra-metal dielectric breakdown", IEEE International Reliability Physics Symposium (IRPS), Quebec, Canada, pp.819-824, (2009).

  6. C.M. Tan and N. Raghavan – “A bimodal 3-parameter Lognormal Mixture Distribution for Electromigration Failures”, Thin Solid Films, Vol. 516, pp.8804-8809, (2008).

  7. N. Raghavan and C.M. Tan, “Statistical Modeling of Via Redundancy Effects on Interconnect Reliability”, 15th IEEE International Symposium on the Physics and Failure Analysis of Integrated Circuits (IPFA), Singapore, pp.67-71, (2008).

  8. C.M. Tan, N. Raghavan and A. Roy – “Application of Gamma Distribution in Electromigration for Submicron Interconnects”, Journal of Applied Physics, Vol. 102, No. 10, 103703, (2007).

  9. C.M. Tan and N. Raghavan – “Unveiling the Electromigration Physics of ULSI Interconnects through Statistics”, Semiconductor Science and Technology, Vol. 22, pp.941-946, (2007).

  10. C.M. Tan and N. Raghavan – “An approach to Statistical Analysis of Gate Oxide Breakdown Mechanisms”, 18th European Symposium on Reliability of Electron Devices, Failure Physics & Analysis (ESREF), Microelectronics Reliability, Vol. 47, Issues 9 – 11, pp.1336-1342, (2007).

  11. N. Raghavan and C.M. Tan, “Statistical Analysis of Multi-Censored Electromigration Data using the EM Algorithm”, 14th IEEE International Symposium on the Physics and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India, pp.257-262, (2007).


RELIABILITY AND MAINTENANCE ENGINEERING

(2004 - 2010)

  1. C.M. Tan and N. Raghavan, "Imperfect predictive maintenance model for multi-state systems with multiple failure modes and element failure dependency", IEEE Prognostics and Health Management Conference (PHM), pp.1-12, Macau, China, (2010).

  2. C.M. Tan and N. Raghavan – “Reply to Comments on ‘A framework to practical predictive maintenance modeling for multi-state systems’”, Reliability Engineering & System Safety, Vol. 94, Issue 3, pp.781-782, (2009).

  3. C.M. Tan and N. Raghavan – “A Framework to Practical Predictive Maintenance Modeling for Multi-State Systems”, Reliability Engineering and System Safety, Vol. 93, Issue 8, pp.1138-1150, (2008).

  4. C.M. Tan and N. Raghavan – “Root Cause Analysis based maintenance policy”, International Journal of Quality and Reliability Management (IJQRM), Vol. 24, No. 2, pp.203 – 228. (2007).

  5. C.M. Tan and N. Raghavan – “A comprehensive predictive maintenance model for equipment maintenance in the semiconductor industry”, IFAC Workshop on Advanced Process Control for Semiconductor Manufacturing, Singapore, (2006).

  6. C.M. Tan and N. Raghavan – “A cost model for the predictive maintenance of a multi-state system”, 10th Maintenance and Reliability Conference (MARCON), University of Tennessee, Knoxville, USA, (2006).

  7. N. Raghavan and C.M. Tan – “Examine the impact of maintenance policy for predictive maintenance”, 4th International Conference on Quality and Reliability (ICQR), Beijing, China, (2005).

INVITED BOOK CHAPTERS

  1. A. Ranjan, N. Raghavan, K. Shubhakar, S.J. O’Shea and K.L. Pey, 2020. Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques. In Noise in Nanoscale Semiconductor Devices (pp. 417-440). Springer, Cham.

  2. S. Cheng, N. Raghavan, J. Gu, S. Mathew and M. Pecht – CHAPTER 3 – “Physics-of-Failure Approach to PHM” - BOOK TITLE – “Prognostics and health management of electronics: Fundamentals, Machine Learning, and the Internet of Things”, Wiley Publications, pp.61-84, (2019).

  3. J. Suňé, N. Raghavan & K.L. Pey – CHAPTER 8 – “Dielectric Breakdown Processes”, BOOK TITLE – “Resistive switching – from fundamentals of nanoionic redox processes to memristive device applications”, pp.225-252, Wiley Publications, (2016).

  4. D.J. Wouters, Y.Y. Chen, A. Fantini & N. Raghavan – CHAPTER 21 – “Reliability Aspects”, BOOK TITLE – “Resistive switching – from fundamentals of nanoionic redox processes to memristive device applications”, pp.597-622, Wiley Publications, (2016).

  5. N. Raghavan & K.L. Pey – CHAPTER – “Reliability of Emerging Nanodevices”, BOOK TITLE – “Reliability Characterization of Electrical and Electronic Systems”, Woodhead Publishers UK, (2015).

  6. C.M. Tan & N. Raghavan – CHAPTER - “Simulated Annealing for Mixture Distribution Analysis and its Applications to Reliability Testing”, BOOK TITLE – “Global Optimization – Focus on Simulated Annealing”, I-Tech Education & Publishing, ISBN: 978-953-7619-07-7, (2008).

WEB-LINK - http://www.intechopen.com/books/show/title/simulated_annealing